inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor BD202F/204f description collector-emitter breakdown voltage- : v (br)ceo = -45v(min)- BD202F -60v(min)- bd204f complement to type bd201f/203f applications designed for use in hi-fi equipment delivering an output of 15 to 15 w into a 4 or 8 load. absolute maximum ratings(t a =25 ) symbol parameter value unit BD202F -60 v cbo collector-base v oltage bd204f -60 v BD202F -45 v ceo collector-emitter voltage bd204f -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i cm collector current-peak -12 a i b base current -3 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 6.3 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor BD202F/204f electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit BD202F -45 v (br)ceo collector-emitter breakdown voltage bd204f i c = -0.2a ;i b = 0 -60 v v (br)cbo collector-base breakdown v oltage i c = -1ma ;i e = 0 -60 v v (br)ebo emitter-base breakdown v oltage i e = -1ma ;i c = 0 -5 v v ce(sat)-1 collector-emitter saturation voltage i c = -3a; i b = -0.3a -1.0 v v ce(sat)-2 collector-emitter saturation voltage i c = -6a; i b = -0.6a -1.5 v v be(sat) base-emitter saturation voltage i c = -6a; i b = -0.6a -2.0 v v be( on ) base-emitter on voltage i c = -3a ; v ce = -2v -1.5 v i ceo collector cutoff current v ce = -30v; i b = 0 -0.2 ma i cbo collector cutoff current v cb = v cbo ;i e = 0 v cb = 1 / 2 v cbo ;i e = 0; t j = 150 -0.1 -1.0 ma i ebo emitter cutoff current v eb = -5v; i c =0 -0.5 ma BD202F i c = -3a ; v ce = -2v h fe-1 dc current gain bd204f i c = -2a ; v ce = -2v 30 h fe-2 dc current gain i c = 11a ; v ce = -2v 30 f t current-gain bandwidth product i c = -0.3a ; v ce = -3v, f test = 1.0mhz 7.0 mhz switching times t on turn-on time 1 s t off turn-off time i c = -2a; i b1 = -i b2 = -0.2a 2 s
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